Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence
Identifieur interne : 000606 ( Main/Exploration ); précédent : 000605; suivant : 000607Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence
Auteurs : RBID : ISTEX:339_1987_Article_BF00616698.pdfEnglish descriptors
Abstract
Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for hole concentrations in the range from 200 to 300 meV have been measured. A reversible change of sign of the Hall voltage has been observed below 215 K. This behaviour can be explained through a model in which acceptor levels are assumed to be shallow and interlayer planar precipitates of ionized shallow donors create potential wells that behave as deep donors and in which a low concentration of bidimensional free electrons can exist. This model also explains the capacitance-voltage characteristics of both ITO/p-InSe and Au/p-InSe barriers. DLTS results are coherent with this model: hole traps in high concentration located about 570 meV above the valence band are detected. Photoluminescence also confirms the shallow character of acceptor levels. A broad band whose intensity is related to p conductivity appears in the PL spectra of low resistivity p-InSe. The shape and temperature dependence of this band can be explained through self-activated photoluminescence in a complex center in which the ground acceptor level must be at about 50 meV above the valence band.
DOI: 10.1007/BF00616698
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Martínez-Tomás</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia</wicri:regionArea><wicri:noRegion>Valencia</wicri:noRegion></affiliation></author><author><name>B. Marí</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia</wicri:regionArea><wicri:noRegion>Valencia</wicri:noRegion></affiliation></author><author><name>A. Casanovas</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia</wicri:regionArea><wicri:noRegion>Valencia</wicri:noRegion></affiliation></author><author><name>A. Chevy</name><affiliation wicri:level="1"><mods:affiliation>Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, Paris Cedex 05, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, Paris Cedex 05</wicri:regionArea><wicri:noRegion>Paris Cedex 05</wicri:noRegion><wicri:noRegion>Paris Cedex 05</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1987_Article_BF00616698.pdf</idno><date when="1987">1987</date><idno type="doi">10.1007/BF00616698</idno><idno type="wicri:Area/Main/Corpus">000371</idno><idno type="wicri:Area/Main/Curation">000371</idno><idno type="wicri:Area/Main/Exploration">000606</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>71.55</term><term>78.55</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for hole concentrations in the range from 200 to 300 meV have been measured. A reversible change of sign of the Hall voltage has been observed below 215 K. This behaviour can be explained through a model in which acceptor levels are assumed to be shallow and interlayer planar precipitates of ionized shallow donors create potential wells that behave as deep donors and in which a low concentration of bidimensional free electrons can exist. This model also explains the capacitance-voltage characteristics of both ITO/p-InSe and Au/p-InSe barriers. DLTS results are coherent with this model: hole traps in high concentration located about 570 meV above the valence band are detected. Photoluminescence also confirms the shallow character of acceptor levels. A broad band whose intensity is related to p conductivity appears in the PL spectra of low resistivity p-InSe. The shape and temperature dependence of this band can be explained through self-activated photoluminescence in a complex center in which the ground acceptor level must be at about 50 meV above the valence band.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="3ee5b0795b4ab4a553efac7c0c07c0591fdb1e8d"><titleInfo lang="eng"><title>Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence</title></titleInfo><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Segura</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">M. C.</namePart><namePart type="family">Martínez-Tomás</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Marí</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Casanovas</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Chevy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, Paris Cedex 05, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1987-04-22</dateCreated><dateCaptured encoding="w3cdtf">1987-05-30</dateCaptured><dateValid encoding="w3cdtf">2004-10-26</dateValid><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for hole concentrations in the range from 200 to 300 meV have been measured. A reversible change of sign of the Hall voltage has been observed below 215 K. This behaviour can be explained through a model in which acceptor levels are assumed to be shallow and interlayer planar precipitates of ionized shallow donors create potential wells that behave as deep donors and in which a low concentration of bidimensional free electrons can exist. This model also explains the capacitance-voltage characteristics of both ITO/p-InSe and Au/p-InSe barriers. DLTS results are coherent with this model: hole traps in high concentration located about 570 meV above the valence band are detected. Photoluminescence also confirms the shallow character of acceptor levels. A broad band whose intensity is related to p conductivity appears in the PL spectra of low resistivity p-InSe. The shape and temperature dependence of this band can be explained through self-activated photoluminescence in a complex center in which the ground acceptor level must be at about 50 meV above the valence band.</abstract><subject lang="eng"><genre>PACS</genre><topic>71.55</topic><topic>78.55</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1987</partNumber><partNumber>Volume: 44</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1987-11-01</dateIssued><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 15</identifier><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00616698</identifier><identifier type="matrixNumber">Art9</identifier><identifier type="local">BF00616698</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>249</start><end>260</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin><recordIdentifier>339_1987_Article_BF00616698.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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